1 tm file number 4869.1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000 is-2981rh radiation hardened 8-channel source driver the star*power radiation hardened is-2981rh is a monolithic device designed for use in high-side switching applications that bene? from separate grounds for the logic and loads. the device has a 5v to 80v operating supply voltage range and is capable of sourcing -200ma continuously from each output. the outputs are controlled by active-high inputs and may be paralleled to increase the drive current. output clamp diodes prevent device damage, when switching inductive loads. constructed with the intersil bonded wafer, dielectrically isolated hvtdlm process, these single event latch-up immune devices have been speci?ally designed to provide highly reliable performance in harsh radiation environments. they are fully guaranteed for 100krad(si) total dose performance through wafer-by-wafer radiation testing, and are production tested over the full military temperature range. speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical speci?ations for these devices are contained in smd 5962-00520. a ?ot-link?is provided on our homepage for downloading. www.intersil.com/spacedefense/space.htm features electrically screened to smd # 5962-00520 qml quali?d per mil-prf-38535 requirements radiation environment - single event latch-up immune. . . . . . . . . . . di process - total dose. . . . . . . . . . . . . . . . . . . 1 x 10 5 rad(si) (max) input voltage range . . . . . . . . . . . 0.0v to v cc (20v max) supply voltage range . . . . . . . . . . . . . . . . . . . . 5v to 80v turn-on delay time . . . . . . . . . . . . . . . . . . . . . . 2 s (max) turn-off delay time . . . . . . . . . . . . . . . . . . . . .11 s (max) output clamp diode, v f . . . . . . . . . . . . . . . -1.75v (max) applications drivers for various loads - relays, solenoids and motors reliable replacement of discrete solutions interfacing between low-level logic and high-current loads pinout is1-2981rh-q (cdip2-t18, sbdip) top view ordering information ordering number internal mkt. number temp. range ( o c) 5962r0052001vvc is1-2981rh-q -55 to 125 5962r0052001qvc IS1-2981RH-8 -55 to 125 is1-2981rh/proto is1-2981rh/proto -55 to 125 tm 10 11 12 13 14 15 16 17 18 9 8 7 6 5 4 3 2 1 out 1 out 3 out 4 out 5 out 6 out 7 out 8 out 2 gnd in 1 in 2 in 3 in 4 in 5 in 6 in 8 in 7 v cc data sheet june 2000
2 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com die characteristics die dimensions: 2667 m x 5131 m (105 mils x 202 mils) thickness: 483 m 25.4 m (19 mils 1 mil) interface materials glassivation type: nitride (si 3 n 4 ) over silox (sio 2 ) nitride thickness: 4.0k ? 1.0k ? silox thickness: 12.0k ? 4.0k ? metallization top metal 2: ti/alcu thickness: 1.6 m 0.02 m metal 1: ti/alcu thickness: 0.8 m 0.01 m substrate hvtdlm, bonded wafer, dielectric isolation backside finish silicon assembly related information substrate potential must be tied to gnd. additional information worst case current density <1.0 x 10 5 a/cm 2 transistor count 68 metallization mask layout is-2981rh 8765 43 2 1 9 9 10 11 12 13 14 15 16 17 18 10 10a 9 9 notes: 1. pad numbers correspond to package pin functions. 2. bond to all four pad 9 locations for v cc current sharing purposes. 3. bond to both pad 10 locations for gnd current sharing purposes. 4. pad 10a is not used in die applications. 5. die backside must be connected to gnd. is-2981rh
is-2981rh printer friendly version rad-hard 8-channel source driver datasheets, related docs & simulations description key features parametric data application diagrams related devices ordering information part no. design- in status temp. package msl smd price us $ is0-2981rh- q active - 18 ld die (military visual) n/a - contact us is1-2981rh- 8 active - 18 ld sbdip n/a 5962r0052001qvc contact us is1-2981rh- q active - 18 ld sbdip n/a 5962r0052001vvc contact us the price listed is the manufacturer's suggested retail price for quantities between 100 and 999 units. however, prices in today's market are fluid and may change without notice. msl = moisture sensitivity level - per ipc/jedec j-std-020 smd = standard microcircuit drawing description the star*power radiation hardened is-2981rh is a monolithic device designed for use in high- side switching applications that benefit from separate grounds for the logic and loads. the device has a 5v to 80v operating supply voltage range and is capable of sourcing -200ma continuously from each output. the outputs are controlled by active-high inputs and may be paralleled to increase the drive current. output clamp diodes prevent device damage, when switching inductive loads. constructed with the intersil bonded wafer, dielectrically isolated hvtdlm process, these single event latch-up immune devices have been specifically designed to provide highly reliable performance in harsh radiation environments. they are fully guaranteed for 100krad(si) total dose performance through wafer-by-wafer radiation testing, and are production tested over the full military temperature range. specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for these devices are contained in smd 5962-00520. a ?hot-link? is provided on our homepage for downloading. www.intersil.com/spacedefense/space.htm key f eatures electrically screened to smd # 5962-00520 qml qualified per mil-prf-38535 requirements radiation environment single event latch-up immune di process total dose 1 x 10 5 rad(si) (max) input voltage range 0.0v to v cc (20v max) supply voltage range 5v to 80v turn-on delay time 2s (max) turn-off delay time 11s (max) output clamp diode, vf -1.75v (max) related documentation
datasheet(s): radiation hardened 8-channel source driver military smd(s): smd for is-2981rh technical homepage: military/space ics parametric data rh level 100 application block diagrams satellite power management applications drivers for various loads relays, solenoids and motors reliable replacement of discrete solutions interfacing between low-level logic and high-current loads about us | careers | contact us | investors | legal | privacy | site map | subscribe | intranet ?2007. all rights reserved.
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